2D Simulation of a Silicon MESFET with aNonparabolic Hydrodynamical Model Basedon the Maximum Entropy Principle
نویسنده
چکیده
A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fitting parameters, has been formulated on the basis of the maximum entropy principle. The model considers the energy band to be described by the Kane dispersion relation and includes electron–nonpolar optical phonon and electron–acoustic phonon scattering. The set of balance equations of the model forms a quasilinear hyperbolic system and for its numerical integration a recent high-order shock-capturing central differencing scheme has been employed. Simulations of an n+–n–n+ silicon diode have been presented and comparison with Monte Carlo data shows the good accuracy of the model and performance of the numerical scheme. Here the results of simulations of a silicon MESFET in the two-dimensional case are presented. Both the model and the numerical scheme demonstrate their accuracy and efficiency as CAD tools for modeling realistic submicron electron devices. c © 2002 Elsevier Science (USA)
منابع مشابه
Simulation of Submicron Silicon Diodes With a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle
متن کامل
A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications
This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...
متن کاملA hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
In this paper we present a hydrodynamical model which describes hole motion in silicon. The model is based on the moment method and the closure of the system of moment equations is obtained by using the maximum entropy principle (hereafter MEP). The heavy, light and split-off valence bands are considered. The first two are described by taking into account their warped shape, while for the split...
متن کاملExtended Hydrodynamical Model of Carrier Transport in Semiconductors
A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method,...
متن کاملFull nonlinear closure for a hydrodynamic model of transport in silicon
We derive, using the entropy maximum principle, an expression for the distribution function of carriers as a function of a set of macroscopic quantities ~density, velocity, energy, deviatoric stress, heat flux!. Given the distribution function, we can obtain a hydrodynamic model in which all the constitutive functions ~fluxes and collisional productions! are explicitly computed starting from th...
متن کامل